Ihlanganiswe nezinzuzo eziphelele zokusebenza kwezinto ezivamile ze-Al2O3 kanye ne-BeO substrate, i-Aluminium Nitride(AlN) ceramic, ene-thermal conductivity ephezulu (i-monocrystal's theory conductivity thermal conductivity ingu-275W/m▪k,theory conductivity ye-polycrystal yi-70~210W/m ▪ ), i-dielectric engaguquki, i-thermal yokwandisa i-coefficient ehambisana ne-crystal silicon eyodwa, kanye nezakhiwo ezinhle zokuvala ugesi, iyinto efanelekile yama-substrates esekethe nokupakishwa embonini ye-microelectronics.Kubuye kube yinto ebalulekile yokushisa okuphezulu kwezakhi ze-ceramic yesakhiwo ngenxa yezakhiwo ezinhle zemishini yokushisa okuphezulu, izakhiwo ezishisayo kanye nokuzinza kwamakhemikhali.
Ukuminyana kwethiyori ye-AlN ngu-3.26g/cm3, ubulukhuni be-MOHS bungu-7-8, ukumelana nezinga lokushisa kwegumbi kukhulu kuno-1016Ωm, futhi ukwanda kokushisa ngu-3.5×10-6/℃ (igumbi lokushisa elingu-200℃).I-Ceramics ye-AlN ehlanzekile ayinambala futhi isobala, kodwa ingaba imibala ehlukahlukene njengompunga, ompunga omhlophe noma ophuzi okhanyayo, ngenxa yokungcola.
Ngaphezu kokusebenza okuphezulu kwe-thermal, i-AlN ceramics nayo inezinzuzo ezilandelayo:
1. Ukufakwa kahle kukagesi;
2. I-coefficient efanayo yokunwetshwa kwe-thermal ene-silicon monocrystal, ephakeme kunezinto ezifana ne-Al2O3 ne-BeO;
3. Amandla aphezulu emishini namandla afanayo aguquguqukayo ngezitsha zobumba ze-Al2O3;
4. Ukulahlekelwa okulinganiselwe kwe-dielectric kanye ne-dielectric;
5. Uma kuqhathaniswa ne-BeO, i-thermal conductivity ye-AlN ceramics ithintwa kancane izinga lokushisa, ikakhulukazi ngaphezu kuka-200℃;
6. Ukumelana nokushisa okuphezulu nokumelana nokugqwala;
7. Non-toxic;
8. Isetshenziswe embonini ye-semiconductor, imboni ye-chemical metallurgy kanye neminye imikhakha yezimboni.
Isikhathi sokuthumela: Jul-14-2023