Kuhlanganiswe nezinzuzo zokusebenza okuphelele kwezinto ze-substrate zendabuko ze-Al2O3 kanye ne-BeO, i-Aluminium Nitride(AlN) ceramic, ene-conductivity ephezulu yokushisa (i-monocrystal's theory thermal conductivity ingu-275W/m▪k，i-polycrystal's theory thermal conductivity ingu-70~210W/m▪k), i-dielectric constant ephansi, i-thermal expansion coefficient ehambisana ne-single crystal silicon, kanye nezakhiwo ezinhle zokushisa zikagesi, iyinto efanelekile ye-circuit substrates kanye nokupakisha embonini ye-microelectronics. Futhi iyinto ebalulekile yezingxenye ze-ceramic zesakhiwo ezishisa kakhulu ngenxa yezakhiwo ezinhle zemishini ezishisa kakhulu, izakhiwo zokushisa kanye nokuqina kwamakhemikhali.
Ubuningi be-AlN obuyi-3.26g/cm3, ubulukhuni be-MOHS bungu-7-8, ukumelana nokushisa kwegumbi kukhulu kuno-1016Ωm, kanti ukwanda kokushisa kungu-3.5×10-6/℃ (izinga lokushisa legumbi elingu-200℃). Izitsha ze-AlN ezimsulwa azinambala futhi zisobala, kodwa zingaba nemibala ehlukahlukene njengompunga, omhlophe ompunga noma ophuzi okhanyayo, ngenxa yokungcola.
Ngaphezu kokushisa okuphezulu, i-AlN ceramics nayo inezinzuzo ezilandelayo:
1. Ukushisa okuhle kagesi;
2. I-coefficient efanayo yokwandisa ukushisa ene-silicon monocrystal, engcono kunezinto ezifana ne-Al2O3 ne-BeO;
3. Amandla aphezulu okusebenza kanye namandla afanayo okugobeka nge-Al2O3 ceramics;
4. Ukulahleka okulinganiselwe kwe-dielectric okungaguquki kanye ne-dielectric;
5. Uma kuqhathaniswa ne-BeO, ukuhanjiswa kokushisa kwe-AlN ceramics akuthinteki kakhulu yizinga lokushisa, ikakhulukazi ngaphezu kuka-200℃;
6. Ukumelana nokushisa okuphezulu kanye nokumelana nokugqwala;
7. Akunabo ubuthi;
8. Ingasetshenziswa embonini ye-semiconductor, embonini ye-metallurgy yamakhemikhali kanye neminye imikhakha yezimboni.
Isikhathi sokuthunyelwe: Julayi-14-2023