I-Silicon Carbide (SiC) Ceramic End Effector – Ukuqina Okuphezulu Kokuphathwa Kwe-Wafer Esezingeni Lokushisa Eliphezulu
I-St.Cera's SiC ceramic end effector yenziwe nge-silicon carbide emsulwa kakhulu (okuqukethwe kwe-SiC okungu-99.72%, i-Si yamahhala engu-0.05%) kusetshenziswa izinto ze-batch ze-S1111. Inikeza izakhiwo ezihlukile zomshini: amandla okuguquguquka angu-449 MPa (alinganisiwe), i-modulus elastic engu-457 GPa (alinganisiwe), kanye nobunzima be-Vickers obungu-25–28 GPa (okuvamile). Ubuningi obuphansi (3.10–3.15 g/cm³, okuvamile) bunikeza ukuqina okuphezulu, okulungele amarobhothi okudlulisa i-wafer asheshayo. Ngokushisa okungu-120–150 W/m·K (okuvamile) kanye ne-coefficient yokwandisa ukushisa engu-4.0–4.5×10⁻⁶/℃ (okuvamile), le effector iqeda ukushisa ngempumelelo futhi igcina ukuzinza kobukhulu ngesikhathi sokuphathwa kokushisa okuphezulu (kufika ku-1600–1700°C, akukho mthwalo). Umbala omnyama/ompunga kanye nokumuncwa kwamanzi okungekho kuqinisekisa ukuhambisana kwegumbi lokuhlanza.
Imininingwane(kusekelwe embikweni wokuhlolwa we-SiC S1111 onikeziwe kanye namanani ajwayelekile):
| Impahla | Inani |
| Izinto | I-SiC (99.72% SiC, 0.05% Si Mahhala) |
| Umbala | Mnyama/Mpunga |
| Ubuningi | 3.10–3.15 g/cm³ |
| Ukumuncwa Kwamanzi | 0% |
| Amandla Okugobeka | 449 MPa (isilinganiso) |
| Ukuqina Kokuphuka | 3.12 MPa·m¹/² (isilinganiso) |
| I-Modulus Enwebekayo | 457 GPa |
| Ukuqina kukaVickers | 25–28 GPa |
| Ukushisa Okuphezulu (25°C) | 120–150 W/m·K |
| I-CTE (25–1000°C) | 4.0–4.5×10⁻⁶/℃ |
| Isikhathi Sokusetshenziswa Esiphezulu (akukho mthwalo) | 1600–1700°C |
Izicelo:
● Ukuphathwa kwe-wafer yokushisa okuphezulu (ngemuva kokufakelwa, i-RTP, i-epitaxy)
● Amakamelo okumboza nge-plasma adinga ukumelana nokuguguleka okuphezulu
● Amarobhothi okudlulisa ngesivinini esikhulu (alula, aqinile kakhulu)
Ukukhiqiza:
Ukuhlanza ngempuphu ye-SiC → ukugaywa kwephrofayili yengalo ngokunemba kwe-CNC kanye nezici zokufaka → ukugoqa okungaphezulu → ukuhlanza nge-ultrasonic. Ukuhlolwa okungu-100% kanye nokuhlolwa kokuvuza kwe-helium kwezicelo ze-vacuum.
Ikhwalithi yokulawula:
● Ukuhlolwa kwe-CMM kobude, ububanzi, kanye nokuba yisicaba
● Ukuhlolwa kwamandla okuguquguquka ngeqoqo ngalinye (ngombiko wokuhlolwa ojwayelekile)
● Ukuhlolwa okubonakalayo ngaphansi kwe-microscope ukuthola amaphutha ebusweni
Izinzuzo ngaphezu kwe-Alumina noma i-Metal:
● I-modulus enwebekayo ephezulu engu-2 × (457 vs ~380 GPa ye-alumina) – ukuphambuka okuncane
● Ukushisa okuphezulu okungu-3 × - ukushabalalisa ukushisa okusheshayo
● Imelana no->1600°C uma kuqhathaniswa no-800°C we-alumina emoyeni
● Ubuningi obuphansi kunensimbi – ukunciphisa isisindo ngo-40%
Ukwenza ngokwezifiso:
Ubude 150–450 mm, izimo ze-tip (i-edge grip, i-Bernoulli, i-flange flat), amaphethini e-flange okufakwayo ngomdwebo we-OEM.
*Yonke imininingwane yemishini engenhla ivela embikweni wokuhlola onikeziwe (i-batch S1111). Amanani okushisa nokuqina ajwayelekile kuleli banga le-SiC; sicela uxhumane nathi ukuze uthole isitifiketi esikhethekile.*
