I-Silicon Carbide (SiC) Esekelwe ku-Vacuum Chuck Yezindawo Ezishisa Kakhulu Nezishisayo Ze-Plasma
I-St.Cera's SiC-based ceramic chuck yenziwe nge-silicon carbide ehlanzekile kakhulu (i-batch S1111, i-SiC 99.72%, i-Si yamahhala engu-0.05%). Inikeza amandla okuguquguquka alinganisiwe angu-449 MPa, ukuqina kokuphuka okungu-3.12 MPa·m¹/², kanye ne-elastic modulus engu-457 GPa. Ukushisa okuvamile kwezinto ezibonakalayo (120–150 W/m·K) kanye nokwanda okuphansi kokushisa (4.0–4.5×10⁻⁶/℃) kuvumela ukusheshisa okusheshayo kanye ne-wafer warpage encane ngesikhathi sokujikeleza kokushisa. I-chuck ingalungiswa njenge-vacuum chuck enezimbobo (ukugeleza kwegesi okufanayo) noma i-chuck ejwayelekile enemiphetho. Njengoba izinga lokushisa eliphezulu lokusetshenziswa lingu-1600–1700°C (akukho mthwalo) kanye nokumelana nokuguguleka kwe-plasma okungavamile, le chuck ilungele ukucubungula i-wafer yokushisa okuphezulu (i-annealing, i-RTP) kanye namakamelo e-aggressive etch lapho ama-alumina chucks ewohloka khona.
Imininingwane(kusekelwe embikweni wokuhlolwa we-SiC S1111 onikeziwe kanye namanani ajwayelekile):
| Impahla | Inani |
| Izinto | I-SiC (99.72% SiC, 0.05% Si Mahhala) |
| Ubuningi | 3.10–3.15 g/cm³ |
| Ukumuncwa Kwamanzi | 0% |
| Amandla Okugobeka | 449 MPa |
| Ukuqina Kokuphuka | 3.12 MPa·m¹/² |
| I-Modulus Enwebekayo | 457 GPa |
| Ukuqina kukaVickers | 25–28 GPa |
| Ukuqhuba Okushisayo | 120–150 W/m·K |
| I-CTE (25–1000°C) | 4.0–4.5×10⁻⁶/℃ |
| Isikhathi Sokusetshenziswa Esiphezulu (akukho mthwalo) | 1600–1700°C |
| Ubude (ngaphezu kuka-300mm) | ≤5 μm |
| Ukuqedwa Komphezulu | I-Ra ≤0.4 μm (igobile) |
Izicelo:
● Ukuthungula okushisa okuphezulu (ukudonsa, i-RTP, ukukhula kwe-epitaxial)
● I-Plasma etch chuck enokumelana okuphezulu kwe-fluorine
● Ukuphathwa kwe-wafer encane ngokushisa/ukupholisa okufanayo
● I-chuck enezimbobo yokusekela i-wafer engathintani
Ukukhiqiza:
Ukusikwa kwe-SiC → ukugaya ngokunembile kokusicaba kanye nephrofayili yomphezulu → ukwakheka kwesakhiwo esinezimbobo okukhethwa kukho (kwe-vacuum chuck) → ukugoqa → ukuhlanza nge-ultrasonic. I-chuck ngayinye ihlolwa ngo-100% ukuthi i-flat (i-laser interferometer) kanye nokufana kwe-vacuum (ukuhlolwa kokugeleza).
Ikhwalithi yokulawula:
● Ukuhlolwa kobukhulu be-CMM (ububanzi, ukujiya, izikhundla zembobo)
● Ukulinganiswa kobuthambe nge-ASTM ngayinye
● Ukuhlolwa kokuvuza kwe-Helium (kwama-vacuum chucks)
● Ukuqinisekiswa kwamandla okuguquguquka ngeqoqo ngalinye (umbiko wokuhlola wereferensi)
Izinzuzo ngaphezu kwe-Alumina Chucks:
● Ukushisa okuphezulu (120–150 vs 32 W/m·K ye-alumina) – Ukudluliselwa kokushisa okusheshayo okungu-4 ×
● I-CTE Ephansi (4.0 vs 7.2×10⁻⁶/℃) – kunciphisa ukucindezeleka kokushisa kwe-wafer
● Ukumelana okuphezulu kwe-plasma - isikhathi eside isikhathi esingu-10 × ku-fluorine etch
● Izinga lokushisa eliphezulu lokusetshenziswa (1600°C vs 800°C ye-alumina)
Ukwenza ngokwezifiso:
● Ubuso obunezimbobo noma obunemiphetho
● Ububanzi obungu-100–450 mm, obuyindilinga noma obuyisikwele
● Indandatho yokuvala umphetho noma izingxenye zokuvala indawo
● Inketho yokusekela ngensimbi yokufaka ukuqina okuphezulu
Yonke imininingwane yemishini engenhla ivela embikweni wokuhlola onikeziwe (i-batch S1111). Amanani okushisa nokuqina ajwayelekile kuleli banga le-SiC. Ama-chuck e-SiC anezimbobo adinga ukucutshungulwa okwengeziwe; sicela ubuze ukuthi kukhona izimbobo ezithile kanye nokutholakala kosayizi wembobo.
