I-Bernoulli Ceramic End Effector — Ukuphathwa Kwe-Wafer Okungathintani Nama-Wafer Amancane Nabuthakathaka

I-St.Cera's Bernoulli ceramic end effector isebenzisa i-aerodynamic lift ukuphatha ama-wafer ngaphandle kokuthintana ngokomzimba. Yenziwe nge-high-purity 99.8% alumina (Al₂O₃) noma i-silicon carbide (SiC), inama-nozzles acutshungulwe kahle akhipha igesi ecindezelwe ukuze kudalwe ifilimu yomoya omncane phakathi kwe-effector yokugcina kanye ne-wafer. Lesi simiso sokungathintani siqeda ukungcola kwangemuva, ukuqhekeka komphetho, kanye nomonakalo womphezulu, okwenza kube kuhle kuma-wafer amancane (≤100 μm), abuthakathaka, noma agobile. I-substrate ye-ceramic inikeza amandla aphezulu okuguquguquka (361 MPa ye-Al₂O₃; kufika ku-550–600 MPa ye-SiC), isisindo esiphansi, kanye nokuzinza okuhle kakhulu, okuqinisekisa indawo ephindaphindwayo kumarobhothi okudlulisa ama-wafer asheshayo.

Inothi ngezinto zokwakha:I-Alumina (Al₂O₃) iyinto esetshenziswa kakhulu kuma-ceramic end effectors ekuphatheni i-semiconductor wafer ngenxa yokuhlanganiswa kwayo okuhle kakhulu kobulukhuni, ukufakelwa kukagesi, ukuzinza kwamakhemikhali, kanye nokusebenza kahle kwezindleko. I-Silicon carbide (SiC) inikeza ukuhanjiswa kokushisa okuphezulu, ubulukhuni obuphezulu, kanye nokumelana nokuguguleka okungcono kakhulu kwezicelo ezidinga kakhulu. Ngenkathi i-yttria-stabilized zirconia (ZrO₂) inikeza ubulukhuni obuphezulu bokuqhekeka ekushiseni kwegumbi, ayisetshenziswa kakhulu kulolu hlelo lokusebenza ngenxa yobuningi bayo obuphezulu kanye nezici ezahlukene zokukhulisa ukushisa; ingacatshangelwa ezimweni ezithile lapho kudingeka khona ubulukhuni obukhethekile bokuqhekeka. Sicela uxhumane nethimba lethu lobuchwepheshe ukuze uthole isiqondiso sokukhetha izinto.

Imininingwane(kusekelwe ku-99.8% Al₂O₃):

Isimiso Sokusebenza:

Umoya ocindezelwe noma i-nitrogen (0.2–0.6 MPa) unikezwa ngeziteshi zangaphakathi kanye nokuphuma ngama-nozzles anembile. Ukugeleza komoya okusheshayo kudala indawo yokucindezela okuphansi ngaphezu kwe-effector yokugcina (umphumela weBernoulli), okukhiqiza amandla okuphakamisa asekela i-wafer ngegebe elingu-50–200 μm. Azikho izimbobo ze-vacuum noma ama-pad athinta i-wafer ngemuva.

Izicelo:

• · Ukuphathwa kwe-wafer encane (≤50 μm) ngemva kokugaya ngemuva
• · Ukuthuthwa kwe-wafer egobile (isb., ngemva kwe-CVD noma i-annealing)
• · Ukudluliswa kwe-substrate ye-sapphire ye-solar cell kanye ne-LED
• · Ukuzenzakalela kwegumbi lokuhlanza okudinga ukukhiqizwa kwezinhlayiya ezingenalutho
• · Ukuphathwa kwamaphaneli engilazi ekubonisweni

Inqubo Yokukhiqiza:

I-substrate ye-ceramic ehlanjululwe ngempuphu ehlanzekile kakhulu → Umshini we-CNC onama-axis ama-5 weziteshi zegesi kanye nemigodi ye-nozzle (ububanzi obungu-0.3–1.0 mm, ukubekezelelana ±0.01 mm) → ukugoqa okungaphezulu kuya ku-Ra ≤0.4 μm → ukuhlanza nge-ultrasonic → ukuhlolwa kokuvuza kwe-helium (iziteshi zegesi). Akukho ukugqoka okudingekayo — indawo ye-ceramic engenalutho ayinamakhemikhali futhi ayingcolisi.

Ikhwalithi yokulawula:

• · Ukuhlolwa okungu-100% kobukhulu (CMM) kwezindawo zomlomo, ubude bengalo, kanye nokuba yisicaba
• · Ukuhlolwa kokufana kokugeleza komoya: ukwehla kwengcindezi ≤5% kuwo wonke ama-nozzle
• · Ukuhlolwa kokuvuza: iziteshi zegesi ezivalwe ku-0.6 MPa, akukho ukwehla kwengcindezi ngaphezu kwemizuzwana engama-30
• · Ukuhlolwa okubonakalayo ngaphansi kwe-microscope engu-20 × ukuthola imifantu emincane noma ama-burrs

Aizinzuzo ngaphezu kwe-Contact End Effectors evamile:

• · Akukho ukungcoliswa kwengxenye engemuva ye-wafer — akukho ukuthintana komshini
• · Akukho ukuqhekeka komphetho noma ukuphuka kwama-wafer amancane
• · Iphatha ama-wafer asontekile (kufika ku-1 mm ubude) anesikhala esizinzile
• · Iqeda i-vacuum generator kanye nokugcinwa kwe-chuck enezimbobo
• · Ukwakhiwa kwe-ceramic kuyamelana nokuguguleka nokuhlaselwa ngamakhemikhali

Ukwenza ngokwezifiso:

• · Iyatholakala ngosayizi we-wafer ongu-200 mm, 300 mm, noma ngokwezifiso
• · Amaphethini e-nozzle yegesi: izinhlobo eziqondile, ezine-engile, noma ze-vortex
• · Izinto zokwakha: i-alumina (ejwayelekile) noma i-silicon carbide (yokuqhuba ukushisa okuphezulu kanye nokumelana nokuguguleka)
• · Ubude bengalo, i-flange yokufaka, kanye nendawo ye-gas port ngomdwebo we-OEM

Imikhawulo:

Ukuqaliswa kwesimiso sikaBernoulli (umklamo we-nozzle, igebe lomoya) kungaphezu kobubanzi bamathebula ezakhiwo zezinto ezinikeziwe. Izakhiwo zemishini nezokushisa ezingenhla zilandela ngokuqinile amashidi edatha anikeziwe angu-99.8% Al₂O₃. Akukho ukwehla kokusebenza kwe-ceramic ngaphansi kokugeleza kwegesi okucindezelwe okulindelekile ngokusekelwe kulezi zakhiwo zezinto. Kuma-wafer azwela ukugeleza kwegesi (isb., i-MEMS enezakhiwo ezibuthakathaka), umfutho wegesi kanye nomklamo we-nozzle kufanele kulungiswe ngokufanele.