Indandatho Yokugxila Kwegumbi Le-Alumina Elihlanzekile Kakhulu Yezinhlelo Zokubumbana Kwe-Plasma kanye Ne-CVD
Indandatho yokugxila kwegumbi likaSt.Cera iyisici esibalulekile sekhithi yenqubo esetshenziswa emishinini ye-plasma etch, CVD, kanye ne-PVD semiconductor. Yenziwe nge-99.8% high-purity alumina (Al₂O₃), indandatho izungeza umphetho we-wafer ukuze ivalele i-plasma futhi ithuthukise ukusatshalaliswa kwe-ion angular, ngaleyo ndlela ithuthukise ukufana kwe-etch kuyo yonke indawo ye-wafer. Izinto ezisetshenziswayo zinikeza ukumelana kwe-plasma okumangalisayo, amandla aphezulu e-dielectric (15×10⁶ V/m), kanye nokuqina kokushisa kuze kufike ku-1600°C, okuqinisekisa ukuthembeka kwesikhathi eside ezindaweni ze-plasma ezisekelwe ku-fluorine noma i-chlorine. I-ID/OD ephansi eqondile kanye ne-flatness (≤10 μm) kuvumela ukubeka umphetho we-wafer ngendlela enembile, kunciphisa amaphutha omphetho kanye nokukhiqizwa kwezinhlayiya.
Imininingwane(kusekelwe ku-99.8% Al₂O₃):
| Impahla | Inani |
| Izinto | I-Alumina engu-99.8% (Ivory) |
| Ubuningi | 3.93 g/cm³ |
| Ukumuncwa Kwamanzi | 0% |
| Amandla Okugobeka | 361 MPa |
| Ukuqina Kokuphuka | 3–4 MPa·m¹/² |
| Ukuqina kukaVickers | 16 GPa |
| I-Modulus kaYoung | 380 GPa |
| Ukuqhuba Okushisayo | 32 W/m·k |
| Ukwanda Kokushisa (25–1000°C) | 7.2×10⁻⁶/℃ |
| Amandla e-Dielectric | 15×10⁶ V/m |
| Ukumelana Okuqondile | >10¹⁴ Ω·cm |
| Izinga Lokushisa Eliphezulu Lokusebenza | 1600°C |
Izicelo:
- · Izindandatho zokugxila zegumbi le-etch elekthroniki (i-oxide, i-nitride etch)
- · Izindandatho zomphetho wegumbi le-silicon etch
- · Amasongo ekhithi yenqubo yegumbi le-CVD
- · Izindandatho zekhabhathi le-PVD kanye nezindandatho ze-clamp
Inqubo Yokukhiqiza:
Impuphu ye-alumina emsulwa kakhulu icindezelwa ngokwe-isostatic → eluhlaza okwenziwe ngomshini ukuze ifane ne-net → ishiswe ku-1600°C → I-CNC diamond grinding ye-ID, i-OD, kanye nobukhulu → ukugoqa ukuze kufezwe ukuthamba ≤10 μm → ukuhlanzwa kwe-ultrasonic → ukuhlolwa kwe-100% CMM. Ukuphela kwendawo Ra ≤0.4 μm kunciphisa ukunamathela kwezinhlayiya.
Ikhwalithi yokulawula:
- · Ukuhlolwa okungu-100% (ID, OD, ukujiya, ukufana)
- · Ukuhlolwa kokufaka udayi kwe-micro-cracks (akuvunyelwe ukuqhekeka)
- · Ukuhlolwa okubonakalayo ngaphansi kwe-microscope engu-20× — akukho zinhlayiya, izikhala, noma ukushintsha kombala
- · Ukuhlolwa kwamandla e-dielectric ngokwe-ASTM D149 (ukuthatha isampula)
Izinzuzo ngaphezu kwe-Silicon noma i-Quartz Focus Rings:
- · Isikhathi sokuphila eside esingu-5–10× ku-plasma ye-fluorocarbon
- · Azikho izinhlayiya zokuguguleka ezingasetshenziswa ukungcolisa ama-wafer
- · Amandla aphezulu e-dielectric avimbela ukugoba
- · Igcina ukuthamba nokunemba okulinganayo phakathi kwamahora e-RF ayizinkulungwane
Izinto Ezihlukile — I-Yttria-Stabilized Zirconia (ZrO2)₂):
Ngezinhlelo zokusebenza ezidinga ukuqina okuphezulu kokuqhekeka (isb., amakamelo anomjikelezo oshisayo ovamile noma ukushaqeka komshini), izindandatho zokugxila ze-ZrO₂ (ubuningi obungu-6.03 g/cm³, amandla okugoba angu-1000 MPa, ukuqina kokuqhekeka okungu-5–8 MPa·m¹/²) ziyatholakala. Kodwa-ke, i-alumina inikeza ukusebenza kahle kwezindleko futhi iyindinganiso embonini yezinhlelo zokusebenza eziningi zendandatho yokugxila.
Ukwenza ngokwezifiso:
- · Amaphrofayili ezitebhisi, ama-counterbore, noma imigodi yokufaka ngomdwebo ngamunye wekhasimende
- · Isembozo se-Y₂O₃ sokumelana nokuguguleka kwe-plasma okuthuthukisiwe (ukujiya okungu-20–100 μm)
- · Ukumaka nge-laser kwenombolo yengxenye, ikhodi yosuku, noma izimpawu zokuqondanisa
Qaphela:Yonke idatha ilandela ngokuqinile ithebula lempahla ye-Al₂O₃ elinikeziwe. Ukuze uthole imininingwane ye-ZrO₂, bheka ishidi ledatha le-zirconia elinikeziwe. Imiklamo yendandatho yokugxila ingadinga imvume yelungelo lobunikazi — amakhasimende anesibopho sokuqinisekisa amalungelo empahla yobuhlakani.
