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Ingalo Yerobhothi Le-Alumina Ceramic Elihlanzekile Kakhulu Lokuphathwa Kwe-Wafer
Ingalo yerobhothi ye-alumina ceramic kaSt.Cera yenziwe ngokunemba kusuka ku-99.8% i-Al₂O₃ (i-alumina) ehlanzekile kakhulu. Ihlanganisa amandla angavamile okugobeka (361 MPa), ubulukhuni obuphezulu (16 GPa), kanye nobuningi obuphansi (3.93 g/cm³), okuholela engalweni elula kodwa eqinile yokudluliselwa kwe-wafer ye-semiconductor. I-coefficient yokwanda kokushisa kwezinto (7.2×10⁻⁶/°C) ifana ne-silicon eduze, inciphisa ukungalingani kokushisa ngesikhathi sokucubungula.
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I-Bernoulli Ceramic End Effector — Ukuphathwa Kwe-Wafer Okungathintani Nama-Wafer Amancane Nabuthakathaka
I-St.Cera's Bernoulli ceramic end effector isebenzisa i-aerodynamic lift ukuphatha ama-wafer ngaphandle kokuthintana ngokomzimba. Yenziwe nge-high-purity 99.8% alumina (Al₂O₃) noma i-silicon carbide (SiC), inama-nozzles acutshungulwe kahle akhipha igesi ecindezelwe ukuze kudalwe ifilimu yomoya omncane phakathi kwe-effector yokugcina kanye ne-wafer. Lesi simiso sokungathintani siqeda ukungcola kwangemuva, ukuqhekeka komphetho, kanye nomonakalo womphezulu, okwenza kube kuhle kuma-wafer amancane (≤100 μm), abuthakathaka, noma agobile. I-substrate ye-ceramic inikeza amandla aphezulu okuguquguquka (361 MPa ye-Al₂O₃; kufika ku-550–600 MPa ye-SiC), isisindo esiphansi, kanye nokuzinza okuhle kakhulu, okuqinisekisa indawo ephindaphindwayo kumarobhothi okudlulisa ama-wafer asheshayo.
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Isiphetho Sokuphela Se-Ceramic Esimbozwe Nge-Teflon – Indawo Enganamatheli Yokuphatha I-Wafer Ebucayi
I-St.Cera's Teflon (PTFE) embozwe nge-ceramic end effector ihlanganisa i-substrate ye-alumina enamandla aphezulu ne-PTFE embozwe ngendlela efanayo, ephansi (ukujiya okungu-15–30 μm). I-coating inikeza i-coefficient ephansi kakhulu yokungqubuzana (≤0.1), ukumelana okuhle kwamakhemikhali, kanye nezakhiwo ezinganamatheli, ivimbela ukunamathela kwe-wafer futhi isuse ukungcola kwangemuva. I-substrate ye-ceramic engaphansi (99.8% Al₂O₃) inikeza amandla aphezulu okugoba (361–1000 MPa), ukumelana nokuguguleka, kanye nokuqina kokushisa okufika ku-260°C (umkhawulo wokumboza). Le effector end ilungele ukuphatha ama-wafer athambile, amancane, noma anamathelayo (isb., ngemuva kokumbozwa kwe-photoresist noma izinqubo zamakhemikhali).
