I-Vacuum Chuck ye-SiC enezimbobo Enensimbi Yokuphatha I-Wafer Egobile Nencane
I-St.Cera's metal based ceramic vacuum chuck ihlanganisa ungqimba lwe-ceramic olunezimbobo ze-silicon carbide (SiC) nesisekelo sensimbi esenziwe ngomshini oqondile (i-aluminium noma insimbi engagqwali). Izinto ze-SiC ezinezimbobo (oluhlaza okwesibhakabhaka-omnyama, izimbobo ezingu-35–40%, usayizi we-pore 20–30 μm, ukuvuleka okungu-60 ml/cm²·min) zinikeza ukusatshalaliswa kwe-vacuum okufanayo, okumnene kulo lonke ubuso be-wafer, kususa ukumakwa komphetho futhi kuvumela ukwesekwa okungenakuthintana kwama-wafer amancane (≤100 μm) noma asontekile. Ungqimba lwe-SiC lunikeza ukwanda okuphansi kokushisa (3.5×10⁻⁶/℃), ukuzinza kokushisa kufika ku-1000°C, kanye namandla okuguquguquka aphakathi (32–35 MPa). Isisekelo sensimbi sengeza ukuqina kwesakhiwo, ukufakwa kalula ngezimbobo ezinezintambo, kanye nokuvikelwa ekuqhekekeni okuqhekekile. Le chuck ilungele ukugaya ngemuva, ukunquma, kanye nokucubungula i-wafer yokushisa okuphezulu lapho i-vacuum efanayo kanye nokuhambisana kokushisa kubalulekile.
Imininingwane (ngokusekelwe kudatha ye-SiC enezimbobo enikeziwe):
| Impahla | Inani |
| Izinto Zobumba | I-Silicon Carbide Enezimbobo (i-SiC ≥80%) |
| Umbala | Okuluhlaza okwesibhakabhaka-omnyama |
| Ukubhoboka | 35–40% |
| Usayizi Wembobo | 20–30 μm |
| Ubuningi | 2.1–2.3 g/cm³ |
| Ukuvunyelwa komoya | 60 ml/cm²·min |
| Amandla Okugobeka | 32–35 MPa |
| I-Coefficient Yokukhulisa Ukushisa (25-1000°C) | 3.5×10⁻⁶/℃ |
| Izinga Lokushisa Eliphezulu Lokusebenza | 1000°C |
| Ukumelana Nogesi | 10⁻¹⁰ Ω/cm (ngedatha enikeziwe, ejwayelekile ye-SiC evulekile) |
| Izinto Eziyisisekelo Zensimbi | I-Aluminium 6061 noma i-Stainless Steel 304 (ongakukhetha) |
| Ubukhulu Besisekelo Sensimbi | 10–30 mm (ngokwezifiso) |
Qaphela: Amandla okugobeka aphansi kune-SiC ejiyile ngenxa yokubhoboka. Izakhiwo zesisekelo sensimbi aziveli ematafuleni e-ceramic.
Izicelo:
- · Ukugaya ama-wafer amancane ngemuva (≤100 μm)
- · Ukufakwa kwe-wafer egobile ukuze kunqunywe
- · Ukuthulula i-wafer eshisa kakhulu (kufika ku-1000°C)
- · Ukufaka i-vacuum kuma-substrate anezimbobo noma abuthakathaka
Ukukhiqiza:
Ipuleti le-SiC elinombobo (elakhiwe ngama-pore formers, elicwebezelwe) → elihlanganiswe lafinyelela ekubeni yisicaba ≤10 μm → isisekelo sensimbi esenziwe ngama-vacuum ports kanye nezici zokufaka → i-epoxy bonding noma i-mechanical clamping → ukuhlolwa kokuvuza kwe-helium.
Ikhwalithi yokulawula:
- · Ubukhulu be-Porosity kanye ne-pore buqinisekiswe yi-SEM
- · Ukuhlolwa kokungena kwamanzi (ukugeleza komoya)
- · Ukuthamba okulinganiswe nge-laser interferometer
- · Izinga lokuvuza kwe-Helium <1×10⁻⁹ Pa·m³/s
Izinzuzo ngaphezu kwama-Grooved noma ama-Dense Ceramic Chucks:
- · Akukho ukumaka kwe-wafer – i-vacuum efanayo engenazo izimbobo ezihlukene
- · Izimbobo ezizihlanzayo – ukuncipha kokuvaleka
- · Izibambo zama-wafer asontekile (kufika ku-500 μm bow)
- · Isisekelo sensimbi sivimbela ukuphuka okuqhekekile futhi senza kube lula ukuhlanganiswa
Imikhawulo:
- · Amandla aphansi okugobeka (32–35 MPa) – gwema ukulayisha okunamandla
- · Izinga lokushisa lokusebenza lilinganiselwe ku-1000°C (i-SiC embozwe yizimbobo), kodwa isibopho se-epoxy sesisekelo sensimbi silinganiselwe ku-≤200°C ngaphandle kokuthi siboshwe ngomshini
- · Akuyona i-vacuum enomfutho ophezulu (isakhiwo esinezimbobo sinciphisa umehluko omkhulu we-vacuum)
Ukwenza ngokwezifiso:
- · Isisekelo sensimbi: i-aluminium (ekhanyayo), insimbi engagqwali (emelana nokugqwala), i-Invar (ukwanda okuphansi)
- · Ukubopha: i-epoxy (≤200°C) noma i-mechanical clamp (kufika ku-500°C)
- · Indandatho yokuvala umphetho yokulawula i-vacuum ye-zone
Sicela uqaphele: Amandla okuguquguquka anikeziwe (32–35 MPa) aphansi kakhulu kune-ceramics eziqinile ngenxa yokubhoboka. Phatha ngokucophelela ukuze ugweme ukuqhekeka komphetho.
