-
Izingxenye ze-Ceramic ze-Alumina High-Precision Ceramic Ring Ceramic
Njengoba zakheke ngokucindezela okubandayo kwe-isostatic futhi zishiswe ngaphansi kokushisa okuphezulu, bese zishiswa ngomshini futhi zipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
-
Imishini Ye-Semiconductor Eyenziwe Ngokwezifiso ye-ST.CERA Ama-Ceramic Chucks
Njengoba zakheke ngokucindezela okubandayo kwe-isostatic futhi zishiswe ngaphansi kokushisa okuphezulu, bese zishiswa ngomshini futhi zipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
-
I-Silicon Carbide (SiC) Ceramic End Effector – Ukuqina Okuphezulu Kokuphathwa Kwe-Wafer Esezingeni Lokushisa Eliphezulu
I-St.Cera's SiC ceramic end effector yenziwe nge-silicon carbide emsulwa kakhulu (okuqukethwe kwe-SiC okungu-99.72%, i-Si yamahhala engu-0.05%) kusetshenziswa izinto ze-batch ze-S1111. Inikeza izakhiwo ezihlukile zomshini: amandla okuguquguquka angu-449 MPa (alinganisiwe), i-modulus elastic engu-457 GPa (alinganisiwe), kanye nobunzima be-Vickers obungu-25–28 GPa (okuvamile). Ubuningi obuphansi (3.10–3.15 g/cm³, okuvamile) bunikeza ukuqina okuphezulu, okulungele amarobhothi okudlulisa i-wafer asheshayo. Ngokushisa okungu-120–150 W/m·K (okuvamile) kanye ne-coefficient yokwandisa ukushisa engu-4.0–4.5×10⁻⁶/℃ (okuvamile), le effector iqeda ukushisa ngempumelelo futhi igcina ukuzinza kobukhulu ngesikhathi sokuphathwa kokushisa okuphezulu (kufika ku-1600–1700°C, akukho mthwalo). Umbala omnyama/ompunga kanye nokumuncwa kwamanzi okungekho kuqinisekisa ukuhambisana kwegumbi lokuhlanza.
-
I-Silicon Carbide (SiC) Esekelwe ku-Vacuum Chuck Yezindawo Ezishisa Kakhulu Nezishisayo Ze-Plasma
I-St.Cera's SiC-based ceramic chuck yenziwe nge-silicon carbide ehlanzekile kakhulu (i-batch S1111, i-SiC 99.72%, i-Si yamahhala engu-0.05%). Inikeza amandla okuguquguquka alinganisiwe angu-449 MPa, ukuqina kokuphuka okungu-3.12 MPa·m¹/², kanye ne-elastic modulus engu-457 GPa. Ukushisa okuvamile kwezinto ezibonakalayo (120–150 W/m·K) kanye nokwanda okuphansi kokushisa (4.0–4.5×10⁻⁶/℃) kuvumela ukusheshisa okusheshayo kanye ne-wafer warpage encane ngesikhathi sokujikeleza kokushisa. I-chuck ingalungiswa njenge-vacuum chuck enezimbobo (ukugeleza kwegesi okufanayo) noma i-chuck ejwayelekile enemiphetho. Njengoba izinga lokushisa eliphezulu lokusetshenziswa lingu-1600–1700°C (akukho mthwalo) kanye nokumelana nokuguguleka kwe-plasma okungavamile, le chuck ilungele ukucubungula i-wafer yokushisa okuphezulu (i-annealing, i-RTP) kanye namakamelo e-aggressive etch lapho ama-alumina chucks ewohloka khona.
-
Imishini Ye-Semiconductor Izingxenye Zokungcebeleka Ze-Ceramic Izithwali Ze-Ceramic
Njengoba zakheke ngokucindezela okubandayo kwe-isostatic futhi zishiswe ngaphansi kokushisa okuphezulu, bese zishiswa ngomshini futhi zipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
-
Indandatho Yokugaya Ye-Alumina Ceramic Esekelwe Ngensimbi Yezicelo Zokubopha Okuqinile
Indandatho yokugaya i-alumina esekelwe ensimbi kaSt.Cera ihlanganisa ungqimba lokugqokwa kwe-ceramic oluhlanzekile kakhulu (99.8% Al₂O₃) olunesisekelo sensimbi esinomshini oqondile (ngokuvamile i-aluminium noma insimbi engagqwali). Lo mklamo ohlanganisiwe unikeza ukumelana nokugqokwa okungavamile kanye nokungangeni kwamakhemikhali kwe-ceramic endaweni yokugaya, kuyilapho isisekelo sensimbi senezela amandla omshini, ukufakwa okulula, kanye nokumelana nokuqhekeka okuqhekeka. Ungqimba lwe-alumina lunikeza amandla okuguquguquka angu-361 MPa, ubulukhuni be-Vickers obungu-16 GPa, kanye nokuqina kokushisa okufika ku-800°C. Isisekelo sensimbi senziwe ngokwezifiso ngezimbobo zokufaka, izikhonkwane zokuthola, noma izakhiwo zikagesi zokuhlanganiswa emishinini yokubopha, ama-grinder eplanethi, kanye nemishini ye-CMP.
-
Izingxenye Ezisele Ze-Ceramic Zemishini Yesiteshi Se-Semiconductor Probe
Njengoba zakheke ngokucindezela okubandayo kwe-isostatic futhi zishiswe ngaphansi kokushisa okuphezulu, bese zishiswa ngomshini futhi zipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
-
Ukucutshungulwa Kwenziwe Ngokwezifiso kwe-Al2O3 Ceramic Wafer Chuck
Njengoba zakheke ngokucindezela okubandayo kwe-isostatic futhi zishiswe ngaphansi kokushisa okuphezulu, bese zishiswa ngomshini futhi zipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
-
Ipuleti leCeramic le-ST.CERA elenziwe ngokwezifiso le-Semiconductor Equipment
Njengoba zakheke ngokucindezela okubandayo kwe-isostatic futhi zishiswe ngaphansi kokushisa okuphezulu, bese zishiswa ngomshini futhi zipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
-
I-Alumina Vacuum Chuck engu-12-Inch Yokucubungula I-Wafer engu-300mm
I-vacuum chuck kaSt.Cera engamasentimitha angu-12 yenziwe ngokunemba kusuka ku-99.8% high-purity alumina (Al₂O₃) yokuphatha i-wafer engu-300mm. I-chuck inendawo egobile kahle (ububanzi be-groove obungu-0.5–1.0 mm, i-pitch engu-2–3 mm) ukuqinisekisa ukusatshalaliswa kwe-vacuum okufanayo kuyo yonke ububanzi obungu-300mm. Ukuthamba kugcinwa ngaphakathi kwama-5 μm, okuvumela ukuqina kwe-wafer engenama-warp ngesikhathi sokusika, ukugaya ngemuva, nokuhlolwa. Amandla aphezulu okugoba (361 MPa) kanye nobunzima (16 GPa) kuqinisekisa ukuzinza kwesikhathi eside ngisho nangaphansi kwemijikelezo ye-vacuum ephindaphindwayo.
-
I-Alumina Ceramic End Effector eneziteshi ze-Vacuum ezihlanganisiwe
I-St.Cera's alumina vacuum end effector ihlanganisa iziteshi ze-vacuum ezisebenza ngomshini oqondile kanye nezimbobo zokumunca ngqo emzimbeni we-alumina ohlanzekile ophezulu ongu-99.8%. Lo mklamo ususa ama-vacuum pad angaphandle, okwenza kube lula ukuthathwa kwe-wafer ngqo ngamandla afanayo okubamba. Amandla aphezulu okugoba (361 MPa) kanye nobunzima (16 GPa) kuqinisekisa ukuzinza kwesikhathi eside ngaphansi kwemijikelezo ye-vacuum ephindaphindwayo. Ukuthamba endaweni ye-pad kugcinwa ngaphakathi kwama-10 μm, okuvimbela ukucindezeleka kwe-wafer kanye nokuphuka. Ama-vacuum port atholakala ku-flange yokufaka yangemuva ukuze kube lula ukuhlanganiswa nezingalo zerobhothi ze-OEM.
-
Izingxenye ze-Ceramic ze-Alumina eziphephile ze-ESD zokuphathwa kwe-Wafer ebucayi neqinile
Izingxenye ze-alumina eziphephile ze-St.Cera's ESD (electrostatic discharge) ceramic zenziwe nge-99.8% high-purity Al₂O₃ enokumelana okuphezulu okulungiselelwe okungu-10⁶–10⁹ Ω/sq, okufezwa ngenqubo yokwelapha noma yokumboza. Lezi zingxenye zisusa ngempumelelo ishaja eqhubekayo, zivimbela ukulimala kwe-electrostatic kuma-wafers e-semiconductor abucayi namadivayisi. Izinto eziyisisekelo zigcina amandla azo aphezulu okugobeka (361 MPa), ubulukhuni (16 GPa), kanye namandla e-dielectric (15×10⁶ V/m). Izingxenye ze-ceramic eziphephile ze-ESD zifaka phakathi ama-end effectors, ama-lift pins, ama-guide rails, kanye nezinto ezenziwe ngokwezifiso zokwenza i-FAB automation.
