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Izingxenye Ezisele Ze-Ceramic Zemishini Yokuhlola I-Semiconductor
Njengoba zakheke ngokucindezela okubandayo kwe-isostatic futhi zishiswe ngaphansi kokushisa okuphezulu, bese zishiswa ngomshini futhi zipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Isithwali Semishini Ye-Semiconductor Yepuleti Le-Ceramic
Njengoba zakheke ngokucindezela okubandayo kwe-isostatic futhi zishiswe ngaphansi kokushisa okuphezulu, bese zishiswa ngomshini futhi zipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Izingxenye Zokungcebeleka Ze-Ceramic Equipment
Njengoba zakheke ngokucindezela okubandayo kwe-isostatic futhi zishiswe ngaphansi kokushisa okuphezulu, bese zishiswa ngomshini futhi zipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Indandatho Yophawu Lwe-Alumina Ceramic Ehlanzekile Kakhulu Yokuvalwa Kwegumbi Eliphezulu Lokushisa
Indandatho yokuvala ye-ceramic kaSt.Cera yakhelwe njengendlela ehlukile kuma-polymer O-rings ezindaweni ezibucayi lapho ama-elastomer ewohloka khona. Yakhiwe nge-99.8% i-alumina ehlanzekile kakhulu (i-Al₂O₃), le ndandatho yokuvala eqinile isetshenziswa ekusetshenzisweni kokuvala okungaguquki — ngokuvamile ehambisana ne-gasket yensimbi ethambile noma ye-graphite — ukuhlinzeka nge-vacuum noma igesi ethembekile emazingeni okushisa afinyelela ku-800°C nasezindaweni ezinolaka ze-plasma noma zamakhemikhali. Izinto ezibonakalayo azinawo umoya ophumayo, amandla aphezulu okucindezela (amandla angaphansi kwe-flexural 361 MPa), kanye nokungasebenzi kahle kwamakhemikhali (okumelana nama-halogen, ama-acid, nama-alkali ngaphandle kwe-HF). Izindawo zokuvala ezihambisana kahle (ukuthamba ≤5 μm, ukugoba kobuso i-Ra ≤0.2 μm) ziqinisekisa ukuthintana okuqinile nokuvuza nezinsimbi zokuhlangana noma izingxenye ze-ceramic.
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Indandatho Yokugxila Kwegumbi Le-Alumina Elihlanzekile Kakhulu Yezinhlelo Zokubumbana Kwe-Plasma kanye Ne-CVD
Indandatho yokugxila kwegumbi likaSt.Cera iyisici esibalulekile sekhithi yenqubo esetshenziswa emishinini ye-plasma etch, CVD, kanye ne-PVD semiconductor. Yenziwe nge-99.8% high-purity alumina (Al₂O₃), indandatho izungeza umphetho we-wafer ukuze ivalele i-plasma futhi ithuthukise ukusatshalaliswa kwe-ion angular, ngaleyo ndlela ithuthukise ukufana kwe-etch kuyo yonke indawo ye-wafer. Izinto ezisetshenziswayo zinikeza ukumelana kwe-plasma okumangalisayo, amandla aphezulu e-dielectric (15×10⁶ V/m), kanye nokuqina kokushisa kuze kufike ku-1600°C, okuqinisekisa ukuthembeka kwesikhathi eside ezindaweni ze-plasma ezisekelwe ku-fluorine noma i-chlorine. I-ID/OD ephansi eqondile kanye ne-flatness (≤10 μm) kuvumela ukubeka umphetho we-wafer ngendlela enembile, kunciphisa amaphutha omphetho kanye nokukhiqizwa kwezinhlayiya.
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Indandatho ye-Ceramic ye-Alumina Ehlanzekile Ephezulu Yezindawo Zokusebenza Ze-CVD / PVD
Indandatho ye-ceramic kaSt.Cera yenzelwe ngqo ukusetshenziswa kumakamelo okucubungula e-CVD (Chemical Vapor Deposition) kanye ne-PVD (Physical Vapor Deposition). Yenziwe nge-99.8% high-purity alumina (Al₂O₃), le ndandatho isebenza njenge-chamber liner, i-focus ring, noma ingxenye ye-process kit ukuvimba i-plasma nokuvikela izindonga zechamber ekugugulekeni. Izinto ezisetshenziswayo zinikeza ukumelana okuhle kwe-plasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kanye nokuqina kokushisa okufika ku-1600°C, okuqinisekisa impilo ende yenkonzo ezindaweni ze-plasma ezisekelwe ku-fluorine. Ukubekezelelana okuqondile kobukhulu (±0.05 mm ku-ID/OD) kanye nokuthamba (≤10 μm) kuvumela ukubeka umphetho we-wafer okuhambisanayo, ukuthuthukisa ukufana kokubekwa kanye nokunciphisa ukukhiqizwa kwezinhlayiya.
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I-Bernoulli Ceramic End Effector — Ukuphathwa Kwe-Wafer Okungathintani Nama-Wafer Amancane Nabuthakathaka
I-St.Cera's Bernoulli ceramic end effector isebenzisa i-aerodynamic lift ukuphatha ama-wafer ngaphandle kokuthintana ngokomzimba. Yenziwe nge-high-purity 99.8% alumina (Al₂O₃) noma i-silicon carbide (SiC), inama-nozzles acutshungulwe kahle akhipha igesi ecindezelwe ukuze kudalwe ifilimu yomoya omncane phakathi kwe-effector yokugcina kanye ne-wafer. Lesi simiso sokungathintani siqeda ukungcola kwangemuva, ukuqhekeka komphetho, kanye nomonakalo womphezulu, okwenza kube kuhle kuma-wafer amancane (≤100 μm), abuthakathaka, noma agobile. I-substrate ye-ceramic inikeza amandla aphezulu okuguquguquka (361 MPa ye-Al₂O₃; kufika ku-550–600 MPa ye-SiC), isisindo esiphansi, kanye nokuzinza okuhle kakhulu, okuqinisekisa indawo ephindaphindwayo kumarobhothi okudlulisa ama-wafer asheshayo.
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Izingxenye ze-Ceramic ze-Alumina ezihlanzekile kakhulu zezicelo ze-Semiconductor nezezimboni
I-St.Cera ikhiqiza izingxenye ze-ceramic ze-alumina ezisebenza ngokunemba (Al₂O₃) ngokwezidingo zamakhasimende. Isebenzisa i-alumina engu-99.8% ehlanzekile kakhulu, lezi zingxenye zinikeza amandla amahle kakhulu okugoba (361 MPa), ubulukhuni obuphezulu (16 GPa), kanye namandla aphezulu e-dielectric (15×10⁶ V/m). Yakhelwe imishini ye-semiconductor, izinhlangano ezingagugi, ama-insulator kagesi, kanye nezinto zokushisa okuphezulu, le nto inikeza ukumuncwa kwamanzi okucishe kube yi-zero (0%) kanye ne-coefficient yokukhulisa ukushisa engu-7.2×10⁻⁶/℃, okuqinisekisa ukuzinza kobukhulu ngaphansi kwezimo ezimbi kakhulu.
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I-Porous Ceramic Vacuum Chuck Yokuphatha I-Wafer Egobile
I-chuck ye-ceramic enezimbobo ye-St.Cera yakhiwe nge-alumina ehlanzekile kakhulu enezimbobo ezivulekile ezifanayo ezingama-30–45% kanye nosayizi we-pore osukela ku-10 kuya ku-100 μm. Ngokungafani nama-chuck avamile anezimbobo, ubuso obunezimbobo buhlinzeka nge-vacuum esatshalaliswe kuyo yonke i-wafer ngemuva, ibamba ngempumelelo ama-wafer asontekile, amancane, noma ahlanganisiwe ngaphandle kokuphakanyiswa noma ukuphuka komphetho. I-vacuum emnene (elungisekayo nge-restrictor) nayo ivimbela ukumaka ngemuva.
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I-Alumina-Based Porous Ceramic Vacuum Chuck Yokuphatha I-Thin Wafer
I-chuck ye-alumina esekwe ku-St.Cera eyenziwe nge-al₂O₃ engu-99.6% ehlanzekile kakhulu enezimbobo ezivulekile ezilawulwayo ezingama-30–45% kanye nosayizi wembobo ofanayo osukela ku-10 kuya ku-50 μm. Ngokungafani nama-chuck anezimbobo, ubuso obunezimbobo buhlinzeka nge-vacuum esakazekile kuyo yonke i-wafer ngemuva, kususa ukumaka komphetho futhi kuvumela ukubamba ngobumnene ama-wafer amancane kakhulu (≤100 μm) noma asontekile. Izinto zinikeza amandla okuguquguquka angama-≥250 MPa kanye nokuqina kokushisa okufika ku-400°C emoyeni.
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Ipuleti Lokusabalalisa Igesi Le-Alumina le-CVD/PVD Showerhead
Ipuleti lokusabalalisa igesi laseSt.Cera (i-showerhead) lenziwe ngomshini oqondile kusuka ku-99.8% alumina ceramic ehlanzekile kakhulu. Linohlu lwemigodi emincane (ububanzi obungu-0.3–1.5 mm) eqinisekisa ukugeleza kwegesi okufanayo phezu kwe-wafer ngesikhathi sezinqubo ze-CVD, PVD, noma ze-ALD. Amandla aphezulu e-dielectric epuleti (>15×10⁶ V/m) kanye nokumelana ne-plasma kwenza kube yinto ebalulekile ekufakweni kwefilimu encane ye-semiconductor.
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Iphini Lokusekela Le-Ceramic Lokulungiswa Kwenqubo Ye-Semiconductor
Amaphini okusekela e-St.Cera's ceramic (aziwa nangokuthi amaphini okuphakamisa noma amaphini okusekela) asetshenziswa emakamelweni enqubo ye-semiconductor ukuphakamisa ama-wafer noma ama-substrate ngesikhathi sokuphatha, ukufudumala, noma ukupholisa. Akhiqizwa nge-99.8% alumina noma i-silicon nitride, la maphini anikeza amandla aphezulu okucindezela, ukuzinza kokushisa, kanye nokumelana namakhemikhali. Umklamo we-hemispherical noma we-flat tip uvimbela ukuklwebheka kwe-wafer.
